Effects of the Perhydropolysilazane Spin-on-Dielectric Passivation Buffers on the Reliability of AlGaN/GaN HEMTs
Keywords:
Current collapse, reliability, SOD-buffer passivation.Abstract
AlGaN/GaN high electron mobility transistors
(HEMTs) are fabricated using a perhydropolysilazane
spin-on-dielectric (SOD) buffered structure with the Si3N4
passivation, and the effects of SOD-buffers on high electric field
degradation and high temperature stability are investigated.
After the high-electric field stresses (high power-state and
off-state) applied to the HEMTs, we observe significantly
enhanced high-electric field reliability in terms of the DC
current collapse (20 and 9 % for high-power state and off-state
stress, respectively) from the SOD-buffered structure compared
to that of the conventional passivation structure (44 and 18 %
for each case). The SOD-buffered structure also shows an
improved high temperature stability producing a lower
saturation drain current reduction of 49 % than that of the
conventional structure (60 %) at 300 oC. It is proposed that the
reliability enhancement of SOD-buffered structure is due to the
reduction in surface state density at the passivation interface
and the suppressed electron trapping.
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