Effects of the Perhydropolysilazane Spin-on-Dielectric Passivation Buffers on the Reliability of AlGaN/GaN HEMTs . International Journal of Information and Electronics Engineering, [S. l.], v. 3, n. 6, p. 590–593, 2013. Disponível em: http://ijiee.org/index.php/ijiee/article/view/752. Acesso em: 2 may. 2026.