Inverse Design of Test Structures for Semiconductor Reliability Prediction Using Generative Adversarial Networks
DOI:
https://doi.org/10.48047/zf39dm29Keywords:
Inverse Design; Physics-Informed Generative Adversarial Network Semiconductor ReliabilityAbstract
This research integrates deep generative learning with physics-informed Generative Adversarial Networks (GANs) to devise methods of the inverse design of reliability test structures for semiconductors. It combines finite-element techniques with deep learning to generate candidate geometries
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Published
25.12.2025
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How to Cite
Inverse Design of Test Structures for Semiconductor Reliability Prediction Using Generative Adversarial Networks. (2025). International Journal of Information and Electronics Engineering, 15(8), 49-57. https://doi.org/10.48047/zf39dm29
