Single-Port 5T SRAM Cell with Improved Write-Ability and Reduced Standby Leakage Current. International Journal of Information and Electronics Engineering, [S. l.], v. 7, n. 1, p. 22–29, 2017. Disponível em: https://ijiee.org/index.php/ijiee/article/view/271. Acesso em: 18 apr. 2026.