Complete Circuit Level Random Variation Models of Nanoscale MOS Performance
Keywords:
Nanoscale, CMOS, analog, mixed signal, circuit level, physical level, statistical design, variability aware design, circuit, system.Abstract
In this research, the complete analytical circuit level models of random variations in large and small signal parameters of any nanoscale MOS transistor have been proposed. Both triode and saturation regions have been explored. This research has been performed based upon the up to dated nanoscale regime MOS equations with the inclusion of all leading sources of variations instead of only threshold voltage variation. The proposed models have been verified at the nanometer level by using the Monte Carlo SPICE
simulations and the Kolmogorov-Smirnof goodness of fit tests. These models are very accurate since they can fit the Monte Carlo based distribution with as high as 99% confidence.
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