A 52nW, 18ppm/°C, Voltage Reference Circuit using BJTs and Subthreshold Mosfet
Keywords:
Voltage reference, low power bandgap voltage circuit, CTAT, PTAT, nano power, subthreshold MOSFETAbstract
A voltage reference circuit which utilizes a pair of
BJTs and a MOSFET operating in subthreshold mode is
designed in 0.13um CMOS 1P6M process. The proportional to
temperature (PTAT) signal is derived using a pair of BJTs,
while complementary to temperature (CTAT) signal is realized
as gate to source voltage of subthreshold MOSFET. It requires
smaller silicon area and is less sensitive to mismatches
compared to the conventional bandgap generation circuit. The
reference circuit works well from 1.3V to 3.6V. It has
temperature stability 18ppm/°C for reference voltage of 1.0V in
the temperature range of -40°C to 85°C and it consumes 52nW
power.
Downloads
Downloads
Published
Issue
Section
License
You are free to:
- Share — copy and redistribute the material in any medium or format for any purpose, even commercially.
- Adapt — remix, transform, and build upon the material for any purpose, even commercially.
- The licensor cannot revoke these freedoms as long as you follow the license terms.
Under the following terms:
- Attribution — You must give appropriate credit , provide a link to the license, and indicate if changes were made . You may do so in any reasonable manner, but not in any way that suggests the licensor endorses you or your use.
- No additional restrictions — You may not apply legal terms or technological measures that legally restrict others from doing anything the license permits.
Notices:
You do not have to comply with the license for elements of the material in the public domain or where your use is permitted by an applicable exception or limitation .
No warranties are given. The license may not give you all of the permissions necessary for your intended use. For example, other rights such as publicity, privacy, or moral rights may limit how you use the material.
